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Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation
Mark J Polking1, Alan M Dibos1, Nathalie P de Leon1,2
1Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, 02138, USA.
Advanced Materials (Deerfield Beach, Fla.)
|December 6, 2017
Summary
Researchers developed a new inorganic passivation method to improve the performance of quantum emitters like carbon antisite-vacancy (CAV) centers in silicon carbide. This technique enhances photostability and emission, crucial for quantum technologies.
Area of Science:
- Quantum Information Science
- Materials Science
- Solid-State Physics
Background:
- Defect-based color centers in wide-bandgap solids are promising for quantum applications.
- Surface-related issues like blinking and photobleaching degrade emitter performance.
- Effective passivation strategies are needed to stabilize these quantum emitters.
Purpose of the Study:
- To present a novel method for stabilizing photoluminescence and charge state of color centers.
- To demonstrate the efficacy of epitaxial inorganic passivation using carbon antisite-vacancy (CAV) centers in 4H-SiC as a model system.
Main Methods:
- Epitaxial growth of an aluminum nitride (AlN) inorganic passivation layer on 4H-SiC.
- Utilizing scanning confocal microscopy to analyze the photoluminescence properties of CAV centers.
- Investigating the effect of the AlN/SiC interface's spontaneous polarization mismatch on charge state control.
Main Results:
- Significant improvement in photostability and enhancement of emission from CAV centers after AlN passivation.
- Demonstrated permanent and spatially selective control of the defect charge state.
- Observed dramatic improvements in photostability and emission intensity.
Conclusions:
- Epitaxial inorganic passivation is an effective strategy for enhancing the performance of defect-based quantum emitters.
- This method significantly improves photostability, emission efficiency, and charge state stability.
- The approach offers a new pathway for developing robust quantum information processing and sensing devices.
