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Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application
Pan Liu1, Xiaoyang Lin2,3, Yong Xu4,5
1Fert Beijing Research Institute, School of Electrical and Information Engineering, Big Data and Brain Computing Center (BDBC), Beihang University, Beijing 100191, China. liupan@buaa.edu.cn.
Materials (Basel, Switzerland)
|December 29, 2017
Summary
This review covers the magnetoresistance effect in magnetic sandwiched structures, highlighting its impact on memory applications. It explores optical modulation and future perspectives for ultralow-power data writing and inter-chip connections.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- The magnetoresistance effect in sandwiched structures, involving ferromagnetic layers and a non-magnetic spacer, has revolutionized memory applications.
- Interlayer exchange coupling (IEC) is a key phenomenon in these magnetic structures.
Purpose of the Study:
- To review the magnetoresistance and IEC effects in magnetic sandwiched structures.
- To discuss optical modulation methods for these effects.
- To explore applications and future perspectives for tunable magnetoresistance.
Main Methods:
- Review of existing literature on magnetoresistance and IEC effects.
- Discussion of optical modulation techniques.
- Analysis of current and potential applications.
Main Results:
- Magnetic sandwiched structures exhibit significant magnetoresistance.
- Optical modulation offers a method to tune magnetoresistance.
- These effects have broad applications in data storage and electronics.
Conclusions:
- Tunable magnetoresistance in sandwiched structures holds promise for ultralow-power, high-speed data writing.
- Potential for advanced inter-chip connections and novel electronic devices.
Keywords:
data storageinterlayer exchange couplingmagnetoresistance effectoptically tunablespintronicsMore Related Videos
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