Ion implantation for deterministic single atom devices

Area of Science:

• Materials Science
• Quantum Computing
• Nanotechnology

Background:

• Deterministic doping is crucial for fabricating advanced quantum devices.
• Current methods often lack the precision for single-atom control.
• Developing techniques for precise ion placement is essential for next-generation electronics.

Purpose of the Study:

• To demonstrate deterministic doping at the single-atom level.
• To present a platform for fabricating single-atom devices.
• To enable precise placement of ions for quantum applications.

Main Methods:

• Utilizing a direct-write focused ion beam (FIB) system for ion placement.
• Employing solid-state ion detectors sensitive to single low-energy heavy ions.
• Integrating nanostructures with ion detection capabilities.

Main Results:

• Achieved deterministic positioning of single ions within 35 nm of a target.
• Demonstrated sensitivity to single low-energy heavy ions.
• Established a platform for fabricating single-atom devices.

Conclusions:

• The developed platform enables precise single-atom doping.
• This technique is applicable to materials like silicon and diamond for donor-based qubits and color centers.
• Facilitates the creation of novel single-atom devices for quantum technologies.