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Updated: Feb 16, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electric-Field Control of Spin-Orbit Torques in WS2/Permalloy Bilayers
Weiming Lv1, Zhiyan Jia, Bochong Wang
1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.
Abstract:
Transition metal dichalcogenides (TMDs) have drawn great attention owing to their potential for electronic, optoelectronic, and spintronic applications. In TMDs/ferromagnetic bilayers, an efficient spin current can be generated by the TMDs to manipulate the magnetic moments in the ferromagnetic layer. In this work, we report on the electric-field modulation of spin-orbit torques (SOTs) in WS2/NiFe bilayers by the spin-torque ferromagnetic resonance technique. It is found that the radio frequency current can induce a spin accumulation at the WS2/NiFe interface because of the interfacial Rashba-Edelstein effect. As a consequence, the SOT ratio between the field-like and antidamping-like torques can be effectively controlled by applying the back-gate voltage in WS2/NiFe bilayers. These results provide a strategy for controlling the SOT by using semiconducting TMDs.
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