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Rapid reagent-less on-line H2O2 quantification in alkaline semiconductor etching solution, Part 2: Nephelometry
Roumen Zlatev1, Margarita Stoytcheva1, Benjamin Valdez1
1Universidad Autónoma de Baja California, Instituto de Ingeniería, Blvd. B. Juárez s/n, 21280 Mexicali, B.C., México.
Abstract:
A simple and rapid reagent less nephelometric method for on-line H2O2 quantification in semiconductors etching solutions was developed, optimized, characterized and validated. The intensity of the light scattered by the oxygen gas suspension resulted from H2O2 catalytic decomposition by immobilized MnO2 was registered as analytical response. The influences of the light wave length, the agitation rate, the temperature and the catalyst surface area on the response amplitude were studied and optimization was done. The achieved linear concentration range from 10 to 150mmolL-1 at 0.9835 calibration curve correlation coefficient, precision from 3.65% to 0.95% and response time from 35 to 20s respectively, at sensitivity of 8.01µAmmol-1 L and LOD of 2.9mmolL -1 completely satisfy the semiconductor industry requirements.
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