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Solution to the Hole-Doping Problem and Tunable Quantum Hall Effect in Bi2Se3 Thin Films
Jisoo Moon1, Nikesh Koirala1, Maryam Salehi1
1Department of Physics and Astronomy and ‡Department of Materials Science and Engineering, Rutgers, The State University of New Jersey , Piscataway, New Jersey 08854, United States.
Nano Letters
|January 10, 2018
Summary
Researchers achieved p-type Bismuth Selenide (Bi2Se3) thin films by engineering interfaces, overcoming a long-standing challenge. This breakthrough enables tunable quantum Hall effect studies and the development of novel topological quantum devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- Bismuth Selenide (Bi2Se3) is a prominent topological insulator (TI) material, typically exhibiting n-type doping due to native defects.
- Previous attempts to create p-type Bi2Se3 thin films have been unsuccessful, hindering the exploration of its full potential.
Purpose of the Study:
- To overcome the challenge of achieving p-type doping in Bi2Se3 thin films.
- To investigate the quantum Hall effect (QHE) in doping-tunable Bi2Se3 thin films.
- To explore the potential for developing topological quantum devices based on Bi2Se3.
Main Methods:
- Interfacial engineering to suppress defect density.
- Fabrication of p-type Bi2Se3 thin films.
- Experimental study of the quantum Hall effect (QHE).
Main Results:
- Successful implementation of p-type Bi2Se3 thin films by mitigating interfacial defects.
- Observation of tunable quantum Hall effect (QHE) in Bi2Se3 thin films.
- Revealed asymmetric QHE signatures and competing anomalous states near the zeroth Landau level.
Conclusions:
- Interfacial defect suppression is key to realizing p-type Bi2Se3 thin films.
- Doping-tunable Bi2Se3 thin films provide a platform for QHE studies.
- This advancement opens avenues for creating previously inaccessible topological quantum devices.
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