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Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature

Yudong Liu1,2,3, Junmeng Guo1,2,3, Aifang Yu1,2

  • 1Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|January 11, 2018
PubMed

Keywords:
MoS2 flakesfield-effect transistorsmagnetic fieldpiezopotentialpolarization states

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