A Collective Study on Modeling and Simulation of Resistive Random Access Memory.
Debashis Panda1, Paritosh Piyush Sahu2,3, Tseung Yuen Tseng4
1Department of Electronics and Communication Engineering, National Institute of Science and Technology, Berhampur, Odisha, 761008, India. dpanda@nist.edu.
Nanoscale Research Letters
|January 12, 2018
Summary
This review details resistive random access memory (RRAM) models, crucial for developing this emerging technology. It analyzes various physical methodologies, features, limitations, and advanced concepts for accurate RRAM device design and standardization.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Engineering
Background:
- Resistive Random Access Memory (RRAM) is an emerging non-volatile memory technology.
- Accurate device models are essential for RRAM design, standardization, and efficient implementation.
- The nascent stage of RRAM necessitates a thorough understanding of its modeling landscape.
Purpose of the Study:
- To provide a comprehensive review of existing RRAM models.
- To analyze the physical methodologies, features, and limitations of various RRAM models.
- To discuss advanced modeling concepts for improved accuracy and applicability.
Main Methods:
- Literature review and analysis of published RRAM models.
- Comparison of prominent models (e.g., Chua, HP Labs, Ielmini) based on parameters.
- Examination of switching dynamics, current-voltage characteristics, and window functions (e.g., Joglekar, Biolek).
Main Results:
- Detailed discussion of physical methodologies for RRAM model development.
- Elucidation of features and limitations of numerous RRAM models.
- Analysis of additional effects and anomalies in memristive systems and their model-based solutions.
Conclusions:
- The review offers a foundational understanding of RRAM model development.
- Identified improvements and new concepts enhance model accuracy and applicability.
- This work serves as a guide for future RRAM model developers and the research community.
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