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Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3
Shengkai Wang1, Xianwen Sun2, Guanghui Li1
1Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
Nanoscale Research Letters
|January 14, 2018
Summary
This study demonstrates multi-level resistance-switching memory and photovoltage effects in Pt/Nd:SrTiO3/In devices. These phenomena are linked to interface barrier modulation, enabling non-destructive sensing of memory states.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Device Physics
Background:
- Strontium titanate (SrTiO3) based devices are explored for advanced electronic applications.
- Understanding interface phenomena is crucial for novel memory and sensing technologies.
Purpose of the Study:
- To investigate multi-level resistance-switching (RS) and photovoltage (PV) effects in Pt/Nd:SrTiO3/In devices.
- To establish the relationship between interface barrier modulation and observed RS/PV effects.
- To explore non-destructive sensing of memory states using photovoltage.
Main Methods:
- Fabrication of Pt/Nd:SrTiO3/In devices with Schottky and Ohmic contacts.
- Characterization of resistance-switching behavior under varying pulse conditions.
- Measurement of photovoltage effects dependent on memory states.
Main Results:
- Pt/Nd:SrTiO3/In devices exhibited multi-level RS memory and memory-state-dependent PV effects.
- Both RS and PV effects were controllable via applied pulse width and magnitude.
- The observed phenomena are attributed to bias-induced modulation of the Pt/Nd:SrTiO3 interface barrier height and width.
Conclusions:
- A strong correlation exists between resistance-switching/photovoltage effects and electric field-induced interface modulation in Nd:SrTiO3.
- Open-circuit voltage offers a novel method for non-destructively sensing multiple non-volatile memory states.
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