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Local Plasmon Engineering in Doped Graphene.

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|January 26, 2018
PubMed
Summary
This summary is machine-generated.

Single-atom doping in graphene with boron or nitrogen atoms precisely tunes its ultraviolet plasmon properties. This atomic-scale control opens new avenues for developing advanced graphene-based optoelectronic devices.

Keywords:
DFTEELSSTEMborongraphenenitrogenplasmon

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene exhibits unique electronic and optical properties due to its π electron system.
  • Plasmonics in two-dimensional materials, like graphene, is crucial for next-generation optoelectronics.
  • Atomic-scale manipulation is key to unlocking advanced material functionalities.

Purpose of the Study:

  • To investigate the effect of single-atom substitutional doping (Boron and Nitrogen) on graphene's interband π plasmon.
  • To explore the potential for tailoring graphene's plasmonic properties at the atomic scale.
  • To confirm the experimental findings with theoretical calculations.

Main Methods:

  • High-resolution electron energy loss spectroscopy (HREELS) combined with scanning transmission electron microscopy (STEM).
  • Low-energy ion implantation for precise single-atom doping of graphene.
  • Ab initio calculations for theoretical validation.

Main Results:

  • Substitutional Boron doping decreased the π plasmon quality factor by 16%.
  • Substitutional Nitrogen doping increased the π plasmon quality factor by 20%.
  • The plasmonic modification was localized within approximately 1 nm of the dopant atom.

Conclusions:

  • Single-atom doping provides a method for atomic-scale tailoring of graphene's plasmonic properties.
  • The observed modifications are localized, demonstrating precise control over plasmon response.
  • This research is a significant step towards developing ultraviolet optoelectronic devices using graphene.