Related Experiment Video
Updated: Feb 14, 2026

Author Spotlight: Evaluating Biophysical Assays for Characterizing PROTACS Ternary Complexes
Published on: January 12, 2024
Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance
Xue-Feng Cheng1, Xiang Hou1, Jin Zhou1
1College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China.
Researchers developed a stable three-state resistive memory device using organic-inorganic hybrid perovskites (OIHP). This breakthrough offers a high device yield for multilevel resistive random-access memory (RRAM) applications.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Organic-inorganic hybrid perovskites (OIHP) show promise for memory devices.
- Ternary resistive memory with three states based on OIHP has not yet been achieved.
- Existing organic ternary resistive memories have limitations in device yield.
Purpose of the Study:
- To achieve ternary resistive memory with three distinct states using OIHP.
- To fabricate high-performance and stable resistive random-access memory (RRAM) devices.
- To explore the potential of OIHP in multilevel memory applications.
Main Methods:
- A pseudohalide-induced 2D perovskite thin film, (CH3NH3)2PbI2(SCN)2, was synthesized using a one-step solution method.
- Al/perovskite film/indium-tin oxide (ITO) RRAM devices were fabricated on both glass and flexible polyethylene terephthalate (PET) substrates.
- Device performance was characterized through current-voltage (I-V) plotting, impedance testing, and electrode area variation.
Main Results:
- A high device yield of 75% was achieved for the ternary resistive memory devices.
- The devices exhibited three distinct states with a conductivity ratio of 1:10^3:10^7.
- The memory devices demonstrated long retention over 10,000 s and good endurance properties.
- Two resistance switching mechanisms were identified: charge trap filling due to defects in 2D nanosheets and conductive filament formation.
Conclusions:
- Stable ternary resistive memory devices based on OIHP have been successfully demonstrated.
- The developed RRAM devices exhibit excellent multilevel storage capabilities with high conductivity ratios and stability.
- This work provides a pathway for developing stable perovskite multilevel RRAMs that operate in ambient conditions.
More Related Videos
Related Concept Videos
meta-Directing Deactivators: –NO2, –CN, –CHO, –⁠CO2R, –COR, –CO2H
2° Amines to N-Nitrosamines: Reaction with NaNO2
SN2 Reaction: Kinetics
In a chemical reaction, a relationship exists between the concentration of reactants and the rate at which the reaction proceeds. The study to measure this relationship is known as the kinetics of a chemical reaction. Kinetic studies are used to deduce the rate law of a chemical reaction, which provides information about the species involved during the transition state of the rate-determining step. Thus, kinetic studies help to derive the mechanism of a...
SN2 Reaction: Mechanism
The presence of the more electronegative halogen in the substrate creates a polarized carbon-halide bond. The halide pulls the electron cloud generating an electrophilic center at the carbon atom. Thus, the carbon atom carries a partial positive charge while the halide has a...
SN2 Reaction: Transition State
When the nucleophile approaches the electrophilic carbon with its lone pairs, the halide acts as a leaving group and moves away with the electron-pair bonded to the carbon. Dotted partial bonds represent the bonds being formed or broken...
SN2 Reaction: Stereochemistry
If the substrate is an achiral molecule at the α-carbon, the inversion of configuration is not...

