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Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers.

Xiqiao Wang¹, Joseph A Hagmann, Pradeep Namboodiri

¹National Institute of Standards and Technology, 100 Bureau Dr., Gaithersburg, Maryland 20899, USA. richard.silver@nist.gov.

|February 21, 2018

Summary

Advanced techniques precisely pattern phosphorus-doped silicon monolayers for quantum computing. A new method using locking layers controls dopant movement, enabling atomic-scale precision in 2-D superlattices.

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Published on: January 19, 2018

Area of Science:

Semiconductor Physics
Quantum Computing Materials

Background:

Advanced hydrogen lithography enables precise patterning of phosphorus-doped silicon (Si:P) monolayers for quantum computing and 2D superlattices.
Challenges include dopant segregation, diffusion, and defect formation during overgrowth, impacting dopant placement accuracy.

Purpose of the Study:

Develop a method to monitor and control atomic-scale dopant movement in Si:P monolayers.
Investigate the impact of locking layers (LLs) on dopant confinement and electrical activation.

Main Methods:

Combined dopant segregation/diffusion models with sputter profiling simulations.
Utilized room-temperature grown locking layers (LLs) with varying growth rates and thicknesses.
Explored rapid thermal annealing and surface accumulation effects.

Main Results:

Increasing LL growth rate is more effective than increasing LL thickness for suppressing dopant movement.
Achieved dopant segregation lengths below a single Si lattice constant at room temperature.
Demonstrated sharp dopant confinement and high electrical quality using high LL growth rate and low-temperature annealing.

Conclusions:

Developed a novel method for atomic-scale dopant movement control in 2D Si:P systems.
This technique is crucial for 2D fabrication requiring precise dopant placement.
Enables suppression, quantification, and prediction of single dopant movement.