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Inducing and manipulating magnetization in 2D zinc-oxide by strain and external voltage
P Taivansaikhan1, T Tsevelmaa2, S H Rhim2
1Department of Physics, Incheon National University, Incheon 22012, Republic of Korea.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|February 28, 2018
Summary
Researchers found that defects in two-dimensional zinc oxide (ZnO) can induce magnetism. Applying strain or an electric field can switch the magnetic easy axis, offering new possibilities for spintronics devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Quantum Chemistry
Background:
- Two-dimensional (2D) materials are crucial for spintronics due to unique magnetic properties.
- Perpendicular magnetic anisotropy and its switchability are key features for advanced spintronics applications.
- Graphene-like zinc oxide (ZnO) is a promising 2D material for exploring novel magnetic phenomena.
Purpose of the Study:
- To investigate the impact of strain and electric fields on vacancy-induced magnetism in 2D ZnO.
- To understand the mechanism behind magnetism and spin direction control in defective ZnO.
- To explore the potential of strain and electric field engineering for manipulating magnetic properties in 2D materials.
Main Methods:
- Density functional theory (DFT) calculations were employed.
- The effects of oxygen (O) and zinc (Zn) vacancies on ZnO magnetism were studied.
- The influence of biaxial compressive strain and external electric fields was analyzed.
Main Results:
- A Zn-vacancy induces significant magnetic moments in neighboring O and Zn atoms due to charge deficit.
- Magnetization easy axis switches from in-plane to perpendicular orientation under ~1-2% compressive strain or electric field.
- Strain and electric field effects are attributed to changes in spin-orbit coupled d states of Zn atoms near a Zn-vacancy.
Conclusions:
- Defective 2D ZnO exhibits tunable magnetism and switchable magnetization orientation.
- Strain and electric fields are effective tools for controlling magnetic properties in 2D materials.
- These findings suggest potential applications in next-generation spintronics devices.
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