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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film

Ching-Ting Lee1,2, Chia-Chi Chen3, Hsin-Ying Lee4

  • 1Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan, Republic of China. ctlee@ee.ncku.edu.tw.

Scientific Reports
|March 7, 2018
PubMed

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