Interfacial engineering in graphene bandgap.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Graphene possesses exceptional electronic properties, mechanical strength, and thermal conductivity, making it ideal for advanced applications.
• The absence of an intrinsic electronic bandgap in graphene hinders its use in high-performance transistors.
• Opening a bandgap in graphene is a critical challenge for its integration into semiconductor electronics.

Purpose of the Study:

• To review recent theoretical and experimental advancements in interfacial engineering for bandgap opening in graphene.
• To categorize and analyze different approaches to achieving a graphene bandgap.

Main Methods:

• Chemical engineering approaches: chemical functionalization, defect introduction, doping, substrate bonding, and quantum confinement.
• Physical engineering approaches: external fields, substrate interactions, physical adsorption, strain engineering, electron many-body effects, and spin-orbit coupling.
• Analysis of methods that preserve the pristine graphene lattice versus those that modify it.

Main Results:

• Interfacial engineering strategies have been developed to create an electronic bandgap in graphene.
• Chemical methods often involve modifications to the graphene lattice, while physical methods largely preserve its atomic structure.
• Various techniques show promise but have not yet fully met all requirements for electronic applications.

Conclusions:

• Interfacial engineering is a key strategy for opening the electronic bandgap in graphene.
• Both chemical and physical approaches offer pathways toward graphene-based semiconductor devices.
• Continued research holds significant potential for future applications of graphene in electronics and beyond.