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Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}
Hema C P Movva1, Timothy Lovorn2, Babak Fallahazad1
1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
Abstract:
We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe_{2}. Shubnikov-de Haas oscillations show that trilayer holes populate two distinct subbands associated with the K and Γ valleys, with effective masses 0.5m_{e} and 1.2m_{e}, respectively; m_{e} is the bare electron mass. At a fixed total hole density, an applied transverse electric field transfers holes from Γ orbitals to K orbitals. We are able to explain this behavior in terms of the larger layer polarizability of the K orbital subband.
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