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Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

Sihui Hou1, Xinming Zhuang2, Zuchong Yang3

  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. 201621050313@std.uestc.edu.cn.

Nanomaterials (Basel, Switzerland)
|March 30, 2018
PubMed

Keywords:
gas sensorgrain boundarynitrogen dioxide (NO2)organic thin-film transistor (OTFT)vertical annealing process

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