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Entropy, Electric Field and Heavily Doped Nanowires
Journal of Nanoscience and Nanotechnology
|April 10, 2018
Summary
Entropy in heavily doped nanowires increases with electron concentration and electric field, and decreases with film thickness. These quantized variations are crucial for quantum effect devices in nanoscience.
Area of Science:
- Condensed Matter Physics
- Nanoscience and Nanotechnology
- Semiconductor Physics
Background:
- Understanding entropy in heavily doped (HD) nanowires (NWs) under electric fields is crucial for advanced electronic devices.
- Existing models may not fully capture the complex behavior of entropy in nanoscale materials.
Purpose of the Study:
- To investigate the behavior of entropy in HD III–V and optoelectronic nanowires under intense electric fields.
- To develop new electron dispersion relations within the k ⋅ p formalism for accurate entropy calculations.
Main Methods:
- Formulation of new electron dispersion relations using the k ⋅ p formalism.
- Analysis of entropy variations in HD nanowires (InSb, InAs, Hg(1–x)Cd(x)Te, In(1–x)Ga(x)As(y)P(1–y)) with electron concentration, film thickness, electric field, and alloy composition.
Main Results:
- Entropy exhibits spiky increases with electron concentration and decreases with film thickness due to Fermi energy alignment with sub-band energies.
- Entropy is found to increase with electric field and decrease with alloy composition.
- Complex energy spectra and effective electron mass within the band gap are observed, highlighting the role of band tailing.
Conclusions:
- The study provides a generalized formulation for entropy in HD NWs, consistent with classical results for bulk semiconductors.
- The findings have significant implications for the design and application of quantum effect devices in nanoscience and nanotechnology.
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