Field Effect Transistor
Bipolar Junction Transistor
Layers of the Epidermis
Thematic Layering in GIS
Layers of the Heart Wall
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Updated: Feb 9, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Ramesh Naidu Jenjeti1, Rajat Kumar1, Muthu P Austeria2
1Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore, 560012, India.
Researchers fabricated the first field-effect transistor (FET) using layered nickel PS3 (NiPS3) exhibiting n-type semiconductor behavior. This breakthrough opens avenues for novel electronic devices utilizing thin semiconductor channels.
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