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Field Effect Transistor Based on Layered NiPS 3.

Ramesh Naidu Jenjeti1, Rajat Kumar1, Muthu P Austeria2

  • 1Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore, 560012, India.

Scientific Reports
|June 7, 2018
PubMed
Summary
This summary is machine-generated.

Researchers fabricated the first field-effect transistor (FET) using layered nickel PS3 (NiPS3) exhibiting n-type semiconductor behavior. This breakthrough opens avenues for novel electronic devices utilizing thin semiconductor channels.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Research

Background:

  • Layered metal phosphochalcogenides (MPX3) are a novel class of semiconductors with potential in catalysis and optoelectronics.
  • Their layered structure and low cleavage energy facilitate the creation of ultra-thin semiconductor channels for advanced devices.

Purpose of the Study:

  • To report the first successful fabrication of a field-effect transistor (FET) using layered NiPS3.
  • To characterize the electronic properties and semiconducting behavior of NiPS3.
  • To investigate factors influencing electron/hole doping in layered phosphochalcogenides.

Main Methods:

  • Fabrication of field-effect transistors (FETs) using bulk and few-layer NiPS3.
  • Electrical characterization of NiPS3 FETs at 25°C with gold contacts.
  • Density functional theory (DFT) calculations to model doping parameters.

Main Results:

  • Successful fabrication of NiPS3-based FETs demonstrating n-type semiconducting behavior.
  • Observed on/off ratios ranging from approximately 10^3 to 10^5.
  • Device characteristics showed increased on-state current with decreased threshold voltage; Schottky barrier height determined to be 112 meV.

Conclusions:

  • Layered NiPS3 is a viable n-type semiconductor for electronic device applications.
  • The study provides key insights into the electronic properties and fabrication of NiPS3-based devices.
  • DFT calculations offer a deeper understanding of doping mechanisms in these materials, guiding future research.