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Iridium Oxide-reduced Graphene Oxide Nanohybrid Thin Film Modified Screen-printed Electrodes as Disposable Electrochemical Paper Microfluidic pH Sensors
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High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel

Bhupendra K Sharma1, Anna Stoesser1, Sandeep Kumar Mondal

  • 1Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , 76344 Karlsruhe , Germany.

ACS Applied Materials & Interfaces
|June 13, 2018
PubMed
Summary
This summary is machine-generated.

We developed a new protocol for high-performance all-printed field-effect transistors (FETs) using amorphous indium-gallium-zinc oxide (a-IGZO) and indium tin oxide (ITO) electrodes. This breakthrough enables advanced printed electronics with excellent electrical properties comparable to sputtered devices.

Keywords:
FET and logicall-printedamorphous In−Ga−ZnOelectrolyte gatingink-jet

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Semiconductor Physics

Background:

  • Oxide semiconductors offer superior performance over amorphous silicon and organic materials, particularly when deposited via physical vapor deposition.
  • Reproducing consistent device characteristics in solution-processed/printed oxide field-effect transistors (FETs), especially with integrated passive elements, presents significant challenges.
  • Developing printable electronic components requires precise control over the electrode/channel interface for optimal performance.

Purpose of the Study:

  • To develop a protocol for designing electronically compatible electrode/channel interfaces for printed oxide FETs.
  • To demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) and indium tin oxide (ITO).
  • To investigate the interfacial effects influencing the electrical performance of printed oxide semiconductor devices.

Main Methods:

  • Judicious selection of electrode and channel materials to create an optimized interface.
  • Fabrication of all-printed FETs and logic circuits utilizing amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) electrodes, and a composite solid polymer electrolyte gate insulator.
  • Compressive spectroscopic studies to analyze the band alignment and doping effects at the a-IGZO/ITO interface.

Main Results:

  • Achieved high-performance all-printed FETs with optimal threshold voltages and device mobility, comparable to devices with sputtered ITO electrodes.
  • Identified the formation of an In-Sn-Zn-O (ITZO)-based-diffused a-IGZO-ITO interface, crucial for controlling doping density and ensuring high electrical performance.
  • Spectroscopic analysis confirmed that Sn doping-mediated band alignment between a-IGZO and ITO electrodes is key to the observed excellent device performance.
  • Successfully demonstrated all-printed n-MOS-based logic circuits, paving the way for next-generation portable electronics.

Conclusions:

  • The developed protocol enables the fabrication of high-performance all-printed oxide FETs and logic circuits.
  • The strategic selection of electrode/channel materials from the same oxide family creates a beneficial diffused interface for enhanced device characteristics.
  • This work provides a pathway for advanced, low-cost, and large-area printed electronics for various applications.