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Equilibrium and dynamics of strained islands
Guido Schifani1, Thomas Frisch1, Médéric Argentina1
1Université Côte d'Azur, CNRS, INPHYNI, Nice, France.
Physical Review. E
|July 18, 2018
Summary
Surface energy anisotropy significantly impacts the coarsening dynamics of strained semiconductor islands. This effect, influenced by initial island heights, alters the driving force for coarsening, leading to varied system behaviors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Semiconductor film growth involves elastically strained islands.
- Island coarsening is a critical process affecting film morphology and properties.
- Surface energy anisotropy is a key factor influencing nanoscale phenomena.
Purpose of the Study:
- To investigate the effect of surface energy anisotropy on the coarsening dynamics of elastically strained semiconductor islands.
- To develop a model that incorporates elastic, capillary, wetting, and anisotropic effects.
- To understand how anisotropy influences the chemical potential and driving force for coarsening.
Main Methods:
- Development of a one-dimensional nonlinear, nonlocal partial differential equation model.
- Construction of an approximate stationary solution using variational methods and an ansatz.
- Numerical simulations to study the coarsening dynamics of island pairs.
Main Results:
- Surface energy anisotropy increases the convexity of the chemical potential.
- Anisotropy affects the driving force for coarsening.
- Numerical simulations show anisotropy can increase or decrease island coarsening time, dependent on initial island heights.
- Two distinct coarsening regimes were identified.
Conclusions:
- Surface energy anisotropy plays a crucial role in the coarsening dynamics of strained semiconductor islands.
- The interplay between anisotropy and initial island geometry dictates the coarsening behavior.
- The findings provide insights into controlling nanostructure evolution in semiconductor films.
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