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Electrical contact resistance in graphite-graphene contacts from ab initio methods.
Ferran Jovell1, Xavier Cartoixà1
1Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain.
Summary
We investigated graphite-graphene contact resistance using first-principles calculations. Optimal overlap significantly reduces resistance, potentially below 100 [Formula: see text], with edge contacts showing promise for low resistance.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Understanding electrical contact resistance is crucial for nanoscale electronic devices.
- Graphite-graphene interfaces are key components in advanced electronic architectures.
- Accurate theoretical predictions of contact resistance are essential for device design.
Purpose of the Study:
- To calculate the contact resistance (Rc) of graphite-graphene contacts in a top contact geometry.
- To investigate the influence of graphene-graphite overlap on ballistic transmission and Rc.
- To explore the potential for low contact resistance in different graphite-graphene contact configurations.
Main Methods:
- First-principles calculations were employed to model the graphite-graphene system.
- Ballistic transmission was analyzed to understand charge carrier transport.
- The dependence of contact resistance on overlap length was systematically studied.
Main Results:
- Contact resistance (Rc) is dependent on the degree of graphene-graphite overlap.
- Rc saturates for transfer lengths around a few tens of Angstroms.
- Overlaps exceeding this saturation length can yield Rc values below 100 [Formula: see text].
Conclusions:
- Optimizing graphene-graphite overlap is critical for minimizing contact resistance in top contact geometries.
- Edge graphite-graphene contacts are predicted to exhibit exceptionally low contact resistance.
- These findings provide valuable insights for designing efficient graphene-based electronic devices.
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