Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps

Area of Science:

• Solid-state physics
• Electrical engineering
• Image sensor technology

Background:

• Evolution of Backside-Illuminated Multi-Collection-Gate (BSI MCG) image sensors.
• Development of ultimate-high-speed silicon image sensors.

Purpose of the Study:

• To summarize the evolution of BSI MCG image sensors.
• To derive the temporal resolution limit for photoelectron conversion layers.
• To design and evaluate a high-speed image sensor model.

Main Methods:

• Theoretical derivation of temporal resolution limits.
• Design and simulation of a simple pixel model for image sensors.
• Analysis of trade-offs between temporal resolution, sensitivity, and crosstalk.

Main Results:

• A test chip achieved a temporal resolution of 10 nanoseconds (ns).
• The theoretical temporal resolution limit for silicon image sensors was determined to be 11.1 picoseconds (ps).
• Simulations indicate a temporal resolution of 50 ps is achievable with current technology.

Conclusions:

• High-speed image sensors can approach theoretical frame rate limits.
• Achieving extreme speeds requires balancing performance trade-offs like sensitivity and crosstalk.
• The designed pixel model demonstrates practical high-speed imaging capabilities.