Reversible resistive switching behaviour in CVD grown, large area MoOx
Fahmida Rahman1, Taimur Ahmed, Sumeet Walia
1Functional Materials and Microsystem Research Group and Micro Nano Research Facility, RMIT University, Melbourne, Victoria 3000, Australia. fahmida.rahman@gmail.com shiva.balendhran@rmit.edu.au.
Nanoscale
|August 25, 2018
Summary
Two-dimensional molybdenum trioxide (MoO3) shows promise for non-volatile resistive memory. This research demonstrates its potential for adaptive, low-power analog memory and neuromorphic computing applications.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Non-volatile resistive memory devices are crucial for advancing analog memory and neuromorphic computing.
- Two-dimensional (2D) molybdenum trioxide (MoO3) is a tunable transition metal oxide with potential for memory applications.
Purpose of the Study:
- To investigate the resistive switching behavior of oxygen-deficient MoOx in a metal/insulator/metal (MIM) cross-point architecture.
- To assess the viability of 2D MoOx as a resistive memory element for adaptive and low-power applications.
Main Methods:
- Synthesis of layered MoOx films using chemical vapor deposition (CVD).
- Fabrication of a cross-point metal/insulator/metal (MIM) device architecture.
- Characterization of non-volatile and reversible resistive switching properties.
Main Results:
- Achieved excellent resistive switching performance with low electroforming and operating voltages.
- Demonstrated high switching ratios of approximately 10^3.
- Confirmed stable data retention exceeding 10^4 seconds.
Conclusions:
- MoOx exhibits viable resistive switching behavior for memory applications.
- 2D MoOx is a promising material for future two-dimensional resistive memory technologies.
- The findings support the development of adaptive and low-power memory solutions.
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