Prediction of an extremely long exciton lifetime in a Janus-MoSTe monolayer

The electron-hole separation efficiency is a key factor that determines the performance of two-dimensional (2D) transition metal dichalcogenides (TMDs) and devices. Therefore, searching for novel 2D TMD materials with a long timescale of carrier lifetime has become one of the most important topics. Here, based on time-domain density functional theory (TD-DFT), we propose a brand new TMD material, namely Janus-MoSTe, which exhibits a strong built-in electric field. Our results show that in the Janus-MoSTe monolayer, the exciton consisting of an electron and hole has a relatively wide spatial extension and low binding energy. In addition, a slow electron-hole recombination process is observed, with a timescale on the order of 1.31 ns, which is even comparable to those of van der Waals (vdW) heterostructures. Further analysis reveals that the extremely long timescale for electron-hole recombination could be ascribed to the strong Coulomb screening effect as well as the small overlap of wavefunctions between electrons and holes. Our findings establish the built-in electric field as an effective factor to control the electron-hole recombination dynamics in TMD monolayers and facilitate their future applications in light detection and harvesting.