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Published on: February 4, 2018
Thermomechanical Noise Characterization in Fully Monolithic CMOS-MEMS Resonators
Rafel Perelló-Roig1, Jaume Verd2, Sebastià Bota3
1System Electronic Group (Physics Department), Universitat de les Illes Balears, 07122 Palma (Balearic Islands), Spain. rafel.perello@uib.es.
This study details the noise characteristics of CMOS-MEMS resonators, achieving unprecedented detection resolution for ultrasensitive applications. Experimental analysis confirms thermomechanical noise detection and system-level limit of detection performance.
Area of Science:
- Microelectromechanical Systems (MEMS)
- Integrated Circuits (IC)
- Sensor Technology
Background:
- Understanding noise characteristics is crucial for improving the sensitivity of micro-scale devices.
- Fully integrated CMOS-MEMS resonators offer potential for miniaturized, high-performance sensing systems.
- Previous research has focused on individual component noise, but system-level analysis is needed.
Purpose of the Study:
- To experimentally analyze the noise characteristics of fully integrated CMOS-MEMS resonators.
- To determine the impact of thermomechanical noise on the system's limit of detection.
- To establish the detection resolution in terms of displacement and capacitance variation.
Main Methods:
- Experimental analysis of four MEMS resonator geometries (2-MHz to 8-MHz).
- Monolithic integration with a low-noise CMOS capacitive readout circuit.
- Characterization of thermomechanical noise and comparison with theoretical models.
Main Results:
- Achieved unprecedented detection resolution of 11 yF·Hz-1/2.
- Demonstrated a minimum detectable displacement (MDD) of 13 fm·Hz-1/2.
- Experimentally verified thermomechanical noise detection and validated against theoretical predictions.
Conclusions:
- Fully integrated CMOS-MEMS resonators provide superior detection resolution for ultrasensitive applications.
- The system-level noise analysis is critical for understanding and optimizing sensor performance.
- This work enables advancements in ultrasensitive detection technologies.
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