A multi-level memristor based on atomic layer deposition of iron oxide

Area of Science:

• Materials Science
• Nanotechnology
• Electrical Engineering

Background:

• Memristive devices are crucial for next-generation computing, offering non-volatility and high density.
• Iron oxide (Fe2O3) is a promising material for memristors due to its tunable electronic properties.

Purpose of the Study:

• To fabricate and characterize memristive devices using Fe2O3 thin films grown by atomic layer deposition (ALD).
• To investigate the resistive switching behavior, stability, endurance, and multi-level capabilities of these devices.

Main Methods:

• Fe2O3 thin films were deposited using ALD with ferrocene and ozone.
• Symmetric Pt/Fe2O3/Pt devices were fabricated.
• Electrical characterization, including current-voltage (I-V) sweeps, was performed.
• Structural analysis using techniques like X-ray diffraction (XRD) was employed.

Main Results:

• ALD enabled the growth of smooth, crystalline Fe2O3 films at temperatures as low as 250 °C.
• The Pt/Fe2O3/Pt devices exhibited stable bipolar resistive switching with good endurance.
• Multi-level switching was achieved by controlling current compliance and RESET voltage.
• Post-switching analysis indicated Joule heating-induced crystallization of the Fe2O3 layer.

Conclusions:

• ALD is a viable technique for fabricating high-quality Fe2O3 thin films for memristive applications.
• The demonstrated multi-level switching capabilities highlight the potential of these devices for memory applications.
• The findings suggest a crystallization mechanism driven by Joule heating during operation.