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Photoresist Contact Patterning of Quantum Dot Films.
Hohyun Keum1, Yiran Jiang2, Jun Kyu Park1
1Department of Mechanical Science and Engineering , University of Illinois , Urbana , Illinois 61801 , United States.
ACS Nano
|September 25, 2018
Summary
Photoresist (PR) contact patterning offers a dry, high-resolution method for patterning colloidal quantum dot (QD) films. This technique enables scalable fabrication of QD-based electronic and optoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Scalable, high-resolution patterning of colloidal quantum dots (QDs) remains a significant challenge.
- The solubility of QDs limits their compatibility with conventional photolithography techniques requiring solution processing.
Purpose of the Study:
- To introduce a novel dry patterning method for colloidal quantum dot films.
- To demonstrate the high-resolution patterning and integration capabilities of this new technique for optoelectronic devices.
Main Methods:
- Development of "photoresist (PR) contact patterning" using a patterned PR layer as a dry contact stamp.
- Selective peeling of QDs from films based on the PR pattern.
- Subsequent transfer printing of patterned QD films onto foreign substrates.
- Utilizing transferred PR layers as masking for additional material deposition.
Main Results:
- Achieved high-resolution, large-area patterning of QD films without compromising material properties.
- Successfully fabricated red, green, and blue (RGB) quantum dot light-emitting diode pixels.
- Demonstrated the utility of PR contact patterning for creating complex, multistack structures.
Conclusions:
- Photoresist (PR) contact patterning provides a versatile and scalable dry method for patterning QD films.
- This technique facilitates the integration of functional multistack structures for advanced QD-based electronic and optoelectronic devices.
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