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Operation Mechanism of a MoS₂/BP Heterojunction FET

Sung Kwan Lim1,2, Soo Cheol Kang3,4, Tae Jin Yoo5,6

  • 1Center for Emerging Electronic Devices and Systems (CEEDS), GIST, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, Korea. lsk8410@gist.ac.kr.

Nanomaterials (Basel, Switzerland)
|October 11, 2018
PubMed

Keywords:
2D/2D heterojunctionMoS2band-to-band tunneling (BTBT)black phosphorusjunction FETtunneling FETtunneling diode

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