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This study demonstrates multilevel resistive switching in Pt/p-NiO/n+-Si memory devices, achieving five stable resistance states by controlling current compliance. This offers a pathway to high-density data storage in resistive random-access memory (RRAM).

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Electronics

Background:

  • High storage density is crucial for advancing resistive random-access memory (RRAM) technology.
  • Multilevel resistive switching (RS) presents a viable approach to increasing RRAM storage density without significant technological overhauls.

Purpose of the Study:

  • To investigate the feasibility of achieving multilevel resistive switching in a Pt/p-NiO/n+-Si memory device.
  • To explore the role of current compliance (CC) in modulating resistance states.
  • To elucidate the mechanism behind multilevel memory operation.

Main Methods:

  • Fabrication of Pt/p-NiO/n+-Si memory devices.
  • Experimental characterization of resistive switching behavior under varying current compliance.
  • Analysis of the conducting filament (CF) formation and rupture mechanism.
  • Development of a model to explain multilevel memory operation.

Main Results:

  • Achieved five stable resistance states in the Pt/p-NiO/n+-Si device by controlling current compliance.
  • Identified the formation and rupture of localized conducting filaments (CFs) in NiO as the primary RS mechanism.
  • Demonstrated that the conductivity of low resistance states (LRS) is governed by the interplay of the p-n junction and localized CFs.
  • Showcased significant resistance value differences between LRS, enabling multilevel memory functionality.

Conclusions:

  • Current compliance effectively modulates the formation of localized CFs and junction resistance, enabling multilevel switching.
  • The developed device architecture and control method provide a promising route for high-density data storage in RRAM.
  • The proposed model successfully accounts for the observed multilevel memory characteristics.