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Updated: Feb 3, 2026

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Published on: May 23, 2018
Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates
Seung-Jae Lee1, Seong-Ran Jeon1, Jin-Woo Ju1
1Korea Photonics Technology Institute, Gwangju 61007, Republic of Korea.
Abstract:
The effects of Al metal pre-deposition under different conditions on GaN grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated. Al pre-deposition improves surface morphology and crystal quality of GaN grown on Si. The surface morphology of Al pre-deposition layer, AlN, and GaN vary depending on Al pre-deposition temperature. With the increase of Al pre-deposition temperature, Al cluster size is observed to increase in the Al predeposition layer due to increased lateral mobility of Al atoms. The Al pre-deposition carried out at about 750 °C enables to grow pit-free GaN layer on Si(111) substrate.
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