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Related Concept Videos

Channel Rhodopsins01:11

Channel Rhodopsins

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Most organisms use photoreceptors to sense and respond to light. Examples of photoreceptors include bacteriorhodopsins and bacteriophytochromes in some bacteria, phytochromes in plants, and rhodopsins in the photoreceptor cells of the vertebral retina. The light-sensitive property of these receptors is because of the bound chromophores, such as bilin in the phytochromes and retinal in the rhodopsins.
Rhodopsins belong to the family of cell surface proteins called G-protein coupled receptors,...
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Related Experiment Video

Updated: Jul 4, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Low-Leakage Current Core-Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band.

Jeong-Kyun Oh1, Dae-Young Um1, Bagavath Chandran1

  • 1Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea.

ACS Applied Materials & Interfaces
|February 7, 2024
PubMed
Summary

Researchers developed a new metal-organic chemical vapor deposition (MOCVD) method to improve aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs). This novel approach enhances luminescence efficiency for next-generation UV-B LEDs.

Keywords:
AlGaNMOCVDUV LEDboundary layercore−shell nanorod

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs) show promise for applications like phototherapy and UV curing.
  • Current UV-B LED development is hindered by low luminescence efficiency.

Purpose of the Study:

  • To introduce a novel epitaxial growth mechanism for AlGaN multiple wells (MWs) on AlGaN nanorod structures.
  • To enhance the control over AlGaN MW height and thickness using metal-organic chemical vapor deposition (MOCVD).

Main Methods:

  • Utilized horizontal reactor-based MOCVD with adjusted H2 carrier gas flow rates.
  • Employed cathodoluminescence (CL) for structural stability analysis.
  • Used transmission electron microscopy (TEM) to confirm core-shell structure formation.

Main Results:

  • Achieved controlled separation of AlGaN well and p-AlGaN layers from the substrate.
  • Demonstrated stable, nonpolarized core-shell AlGaN quantum wells with consistent wavelength peaks.
  • Confirmed distinct 275 nm AlGaN core and 295 nm AlGaN shell structures.
  • Observed significantly improved electroluminescence (EL) peak intensity and reduced leakage current.

Conclusions:

  • The novel growth mechanism and nonpolarized core-shell AlGaN structure offer a pathway to substantially enhance UV-B LED efficiency.
  • This advancement is crucial for developing next-generation high-efficiency UV LEDs.