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Mapping Electron Transfer at MoS2 Using Scanning Electrochemical Microscopy.

Nicole L Ritzert1,2, Veronika A Szalai, Thomas P Moffat

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Defects in layered transition metal dichalcogenides significantly impact electron transfer. Edge sites and specific surface features on MoS2 flakes show higher electrochemical reactivity than flat areas, crucial for device optimization.

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Area of Science:

  • Materials Science
  • Electrochemistry
  • Surface Science

Background:

  • Layered transition metal dichalcogenides (TMDs) are crucial for energy conversion and electronics.
  • Understanding defects is key to optimizing TMD performance.
  • Current methods for studying electron transfer often require separate characterization.

Purpose of the Study:

  • To investigate the electrochemical activity of different surface features on MoS2.
  • To correlate macroscopic and atomic defects with interfacial electron transfer properties.
  • To compare electrochemical behavior under uniform experimental conditions.

Main Methods:

  • Scanning electrochemical microscopy (SECM) was used to map MoS2 flakes.
  • Heterogeneous electron transfer rate constants (k) were measured for specific redox probes.
  • SECM results were compared with optical and atomic force microscopy images.

Main Results:

  • Visually flat MoS2 areas showed smaller and more varied rate constants (k) for [Fe(CN)6]3-/4- compared to [Ru(NH3)6]3+.
  • The reduction of [Fe(CN)6]3- and oxidation of [Fe(CN)6]4- exhibited similar rate constants, suggesting charge transfer via surface states.
  • Edge sites, macrosteps, and recessed areas displayed the highest electrochemical reactivity.

Conclusions:

  • Surface states play a dominant role in charge transfer on MoS2.
  • Macroscopic and atomic defects, particularly at edges and steps, are highly electroactive.
  • SECM is effective for mapping electrochemical activity on TMD surfaces without separate characterization.