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Acceleration Sensitivity in Bulk-Extensional Mode, Silicon-Based MEMS Oscillators.

Beheshte Khazaeili1, Jonathan Gonzales2, Reza Abdolvand3

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Summary
This summary is machine-generated.

Resonator alignment significantly impacts acceleration sensitivity in silicon oscillators. Aligning to the <110> crystalline plane reduces sensitivity compared to the <100> plane, crucial for vibration-sensitive devices.

Keywords:
MEMS resonatorsacceleration sensitivitynonlinearityvibration sensitivity

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Area of Science:

  • Materials Science
  • Mechanical Engineering
  • Electrical Engineering

Background:

  • Silicon bulk-extensional mode oscillators are vital for inertial sensing.
  • Understanding acceleration sensitivity is critical for device performance and reliability.

Purpose of the Study:

  • To investigate the correlation between silicon resonator alignment and acceleration sensitivity.
  • To develop a model predicting acceleration-induced frequency variations.

Main Methods:

  • Finite element modeling to simulate acceleration effects on resonators.
  • Experimental implementation using a thin-film piezoelectric-on-substrate platform.
  • Comparative analysis of acceleration sensitivity for <110> and <100> silicon plane alignments.

Main Results:

  • A significant reduction in acceleration sensitivity was observed when resonators were aligned to the <110> plane compared to the <100> plane.
  • The finite element model accurately predicted orientation-dependent acceleration sensitivity and material nonlinearity effects.
  • Approximately one order of magnitude lower acceleration sensitivity was measured for <110>-aligned resonators (~3.66 × 10-9 (1/g)) versus <100>-aligned resonators (~5.66 × 10-8 (1/g)).

Conclusions:

  • Silicon resonator orientation is a key factor in mitigating acceleration sensitivity.
  • The <110> crystalline plane alignment offers superior performance for vibration-resistant silicon oscillators.
  • This research provides a pathway for designing more robust inertial sensors.