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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film

Dapeng Wang1, Mamoru Furuta2,3

  • 1Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China.

Beilstein Journal of Nanotechnology
|November 15, 2018
PubMed

Keywords:
InGaZnOactive layer thicknessgate biasillumination stressphotoleakage currentthin-film transistors

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