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Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT
Dimitry Kouzminov1, James Cournoyer1, Somchintana Norasetthekul1
11Varian Semiconductor Equipment Division,Applied Materials Inc.,35 Dory Road, Gloucester, MA 01930,USA.
Abstract:
Application of atom probe tomography (APT) and 1.5D secondary ion mass spectrometry (SIMS) as complimentary techniques to study fin sidewall doping by plasma implantation (PLAD) is the focus of this paper. Unlike planar transistors, characterization of 3D devices both by SIMS and APT requires sample preparation via trench backfill with α-Si, or other material, via chemical vapor deposition or atomic layer deposition process due to high aspect ratio of test structures. Certain artifacts with adverse impacts on quantitative results encountered in this study are discussed.
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