Low-Temperature Process for Direct Formation of MoS2 Thin Films on Soda-Lime Glass Substrates

To obtain molybdenum disulfide (MoS₂) patterns without any mechanical problems caused by the transfer process, direct current (DC) sputtering and rapid thermal processing (RTP) were used to form MoS₂ instead of the conventional chemical vapor deposition (CVD) process. To form MoS₂ on a soda-lime glass substrate at temperatures below 600 °C, MoS₂ films were deposited at various DC sputtering powers and annealed at various temperatures from 400 °C to 550 °C. From the scanning electron microscope (SEM) and atomic force microscope (AFM) results, the surface morphologies of the MoS₂ films can be observed, depending on the sputtering power and the film thickness. The Raman spectrum results showed that the E¹_2g and A¹_g mode peaks appeared at approximately 372 cm^-1 and 400 cm^-1, respectively, and the MoS₂ surface was crystallized in the in-plane direction. The X-ray photoelectron spectroscopy (XPS) results showed noticeable S 2p (2p_3/2, 2p_1/2) peaks and Mo 3d (3d_5/2, 3d_3/2) peaks at stable binding energies after RTP at temperatures below 600 °C. The high mobilities and carrier densities of all the MoS₂ films can be investigated from the Hall measurements.