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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Improved Electrical Performance of SiO₂-Doped Indium Zinc Oxide Thin-Film Transistor

Yooseong Lim1, Namgyung Hwang1, Jeongsuk Lee1

  • 1Department of Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea.

Journal of Nanoscience and Nanotechnology
|November 25, 2018
PubMed

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