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Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process
Myeong Cheol Shin1, Hun-Suk Chung1, Byung-Sub Ahn1
1Department of Photovoltaic Engineering, Far East University, Chungbuk 369-700, Korea.
Journal of Nanoscience and Nanotechnology
|November 25, 2018
Summary
This study optimizes the 3.3 kV super junction Field Stop Insulated Gate Bipolar Transistor (FS IGBT) for next-generation power electronics. Structural design modifications, particularly p-pillar dose, are key to achieving high breakdown voltage.
Area of Science:
- Power Electronics
- Semiconductor Device Physics
- Materials Science
Background:
- The demand for high-performance power devices is increasing.
- Super Junction Field Stop Insulated Gate Bipolar Transistors (FS IGBTs) are crucial for next-generation power applications.
- Optimizing device structure is essential for enhanced electrical characteristics.
Purpose of the Study:
- To analyze the electrical characteristics of 3.3 kV super junction FS IGBTs.
- To optimize the breakdown voltage through structural design.
- To identify key design and process parameters for improved performance.
Main Methods:
- Device parameter extraction using design and process simulation.
- Analysis of breakdown voltage concerning trench depth and p-pillar dose.
- Experimental validation of simulation results.
Main Results:
- Breakdown voltage decreases with increasing trench depth.
- Breakdown voltage increases with increasing p-pillar dose.
- Achieved over 3.3 kV breakdown voltage with a p-pillar dose of 5×1013 cm-2 and epi layer resistivity of 140 Ω·cm.
Conclusions:
- Structural design, specifically p-pillar dose, significantly impacts the breakdown voltage of FS IGBTs.
- Optimal parameters were identified for achieving >3.3 kV breakdown voltage.
- Further research will focus on on-state voltage drop optimization.
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