Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Yang Li1, Xue-Yin Sun, Cheng-Yan Xu

  • 1State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China. cy_xu@hit.edu.cn lzhen@hit.edu.cn.

Nanoscale
|December 5, 2018
PubMed
Summary

Ferroelectric resistive switching was observed in graphene/BFO and MoS2/BFO heterojunctions. This behavior, influenced by 2D material thickness, offers new possibilities for memory devices.

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