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Atomic layer etching of chrome using ion beams.

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Two atomic layer etching (ALE) methods precisely control chromium (Cr) etching. These methods achieve atomic precision and high selectivity over silicon-based materials without damaging the Cr surface.

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Precise control over metal etching is crucial for advanced microelectronic fabrication.
  • Existing etching methods often lack the atomic-level precision and selectivity required for next-generation devices.

Purpose of the Study:

  • To investigate two novel atomic layer etching (ALE) methods for chromium (Cr) etching.
  • To evaluate the etch characteristics, selectivity, and surface integrity of Cr using these ALE techniques.

Main Methods:

  • Chemical anisotropic ALE: Utilizing O radical adsorption followed by Cl+ ion desorption.
  • Physical anisotropic ALE: Employing Cl/O radical adsorption followed by Ar+ ion desorption.

Main Results:

  • Achieved saturated etch depths of 1.1 Å/cycle (chemical) and 1.5 Å/cycle (physical).
  • Demonstrated near-infinite etch selectivities over silicon, silicon dioxide, and silicon nitride.
  • Maintained original Cr surface roughness and chemical composition, indicating no surface damage.

Conclusions:

  • Both Cr ALE methods offer precise, atomic-level control over etch depth.
  • The developed ALE techniques provide excellent selectivity and preserve surface integrity.
  • ALE is a viable technique for precise thickness control of metals like Cr without surface damage.