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Segregation and Morphological Evolution of Si Phase during Electromagnetic Directional Solidification of
Weiyan Jiang1, Wenzhou Yu2,3, Jie Li4,5
1College of Materials Science and Engineering, Chongqing University, Chongqing 400045, China. jwy1020@163.com.
Abstract:
Understanding the Si segregation behavior in hypereutectic Al-Si alloys is important for controlling the micro- and macrostructures of ingots. The macrosegregation mechanism and morphological evolution of the primary Si phase were investigated during electromagnetic directional solidification (EMDS). Both numerical simulations and experimental results strongly suggested that the severe macrosegregation of the primary Si phase was caused by fluid flow and temperature distribution. Microscopic analysis showed that the morphological evolution of the Si crystal occurred as follows: planar → cellular → columnar → dendritic stages during EMDS. Based on constitutional supercooling theory, a predominance area diagram of Si morphology was established, indicating that the morphology could be precisely controlled by adjusting the values of temperature gradient (G), crystal growth rate (R), and solute concentration (C₀). The results provide novel insight into controlling the morphologies of primary Si phases in hypereutectic Al-Si alloys and, simultaneously, strengthen our understanding of the macrosegregation mechanism in metallic alloys.
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