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Process Variability-Technological Challenge and Design Issue for Nanoscale Devices.

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Summary
This summary is machine-generated.

Advanced 3D transistor architectures require precise geometry control. A new hierarchical simulation system effectively models process variations, ensuring device performance from equipment to circuit levels.

Keywords:
FinFETscompact modelsdevice simulationnanosheetsnanowiresprocess simulationprocess variationsstatistical variationssystematic variations

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Area of Science:

  • Semiconductor device physics and fabrication.
  • Computational modeling and simulation.
  • Integrated circuit design and variability analysis.

Background:

  • Advanced transistor designs like FinFETs and nanosheets utilize complex 3D architectures.
  • Process variations significantly impact device and circuit performance, especially in scaled technologies.
  • Accurate simulation of 3D geometries and non-ideal processes is crucial for optimizing performance and managing variations.

Purpose of the Study:

  • To present a hierarchical simulation system for analyzing the impact of process variations on advanced 3D transistors.
  • To investigate technological challenges, particularly those arising from structuring processes for 3D architectures.
  • To demonstrate the feasibility of simulating systematic and stochastic variations from equipment to circuit level.

Main Methods:

  • Development of a hierarchical simulation system integrating commercial and novel tools within the SUPERAID7 project.
  • Focus on simulation of structuring processes critical for 3D device fabrication.
  • Analysis of both systematic and stochastic variations induced by process equipment.

Main Results:

  • The developed hierarchical simulation system effectively models the impact of variations on advanced 3D transistor architectures.
  • Key technological challenges associated with fabricating 3D structures were identified and addressed through simulation.
  • Feasibility of comprehensive simulation for systematic and stochastic variations across device and circuit levels was demonstrated.

Conclusions:

  • The SUPERAID7 simulation system provides a viable approach to manage geometric and process variations in advanced 3D transistors.
  • Accurate simulation is essential for achieving target performance and ensuring reliability in next-generation semiconductor devices.
  • This work facilitates the optimization of fabrication processes and circuit design for 3D transistor technologies.