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Updated: Jan 31, 2026
Synthesis of Substrate-Bound Au Nanowires Via an Active Surface Growth Mechanism
Published on: July 18, 2018
Recent advances in III-Sb nanowires: from synthesis to applications
SenPo Yip1,2, Lifan Shen1,3, Johnny C Ho1,2,4,5
1Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong Special Administrative Region of China, People's Republic of China.
Abstract:
The excellent properties of III-V semiconductors make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.
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