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Properties of Enantiomers and Optical Activity

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties.

David K Sang^1,2, Huide Wang³, Meng Qiu⁴

¹Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China. dks@szu.edu.cn.

Nanomaterials (Basel, Switzerland)

|January 13, 2019

Summary

This summary is machine-generated.

Quantum size effects in beta-Indium Selenide (β-InSe) thin films alter electronic band structure and optical properties. Layer thickness significantly modulates these characteristics, crucial for advanced electronic devices.

Keywords:

Indium Selenide Layer-dependent density functional theory optical properties work function

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) layered materials exhibit unique properties due to quantum confinement.
Tuning material properties through layer control is key for next-generation electronics.

Purpose of the Study:

Investigate the layer-dependent electronic band structure, work function, and optical properties of beta-Indium Selenide (β-InSe).
Understand the impact of quantum size effects (QSEs) on β-InSe properties.

Main Methods:

Utilized density functional theory (DFT) calculations.
Analyzed electronic band structure, work function, and optical properties (dielectric function).

Main Results:

Observed direct-to-indirect band structure transitions with decreasing layer thickness due to QSEs.
Monotonically decreasing work function from monolayer (1 L) to bulk β-InSe.
Significant thickness dependence of the imaginary part of the dielectric function.

Conclusions:

Layer control is an effective strategy to modulate the properties of 2D β-InSe.
Tuned electronic and optical properties suggest potential for high-performance electronic and optoelectronic devices.