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Wafer-scale transferred multilayer MoS2 for high performance field effect transistors.

Simeng Zhang1, Hu Xu1, Fuyou Liao1

  • 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.

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|January 15, 2019
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Summary

Researchers developed a layer-by-layer vacuum stacking transfer method for uniform multilayer molybdenum disulfide (MoS2) films. This technique significantly boosts field-effect mobility in MoS2 transistors, enabling advanced semiconductor devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Chemical vapor deposition (CVD) is a key method for synthesizing transition metal dichalcogenides (TMDs).
  • Achieving uniform multilayer (ML) TMD films is challenging due to growth kinetics and energy considerations.
  • Molybdenum disulfide (MoS2) is a promising 2D material for next-generation electronics.

Purpose of the Study:

  • To develop a method for creating uniform and non-destructive ML-MoS2 films.
  • To investigate the electrical performance of MoS2 field-effect transistors (FETs) with varying layer numbers.
  • To explore thickness-dependent characteristics and electrostatic control in ML-MoS2.

Main Methods:

  • Utilized a layer-by-layer vacuum stacking transfer technique to fabricate ML-MoS2 films.
  • Fabricated back-gated FET arrays using 1L-, 2L-, 3L-, and 4L-MoS2 on the same wafer.
  • Investigated dual-gated structures for enhanced electrostatic control.

Main Results:

  • Achieved uniform and non-destructive ML-MoS2 films.
  • Observed a significant increase in field-effect mobility for 2L-MoS2 (32.5 cm2 V-1 s-1) compared to 1L-MoS2 (4.5 cm2 V-1 s-1).
  • Found that increasing MoS2 layer number enhances mobility but reduces the current on/off ratio, with optimal performance in 2L- and 3L-MoS2 FETs.

Conclusions:

  • The vacuum stacking transfer method enables high-quality ML-MoS2 films for electronic applications.
  • Device performance, particularly mobility, is strongly dependent on the number of MoS2 layers.
  • A balance between mobility and current on/off ratio is achievable in few-layer MoS2, and dual-gating improves channel control.