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A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode
Anbang Zhang1, Qi Zhou2, Chao Yang3
1School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China. anbangzhang@outlook.com.
Researchers developed a novel AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD). This device offers stable current output across a wide temperature range, ideal for power electronics applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Gallium Nitride (GaN) based devices are crucial for high-power and high-frequency applications due to their superior material properties.
- Current regulating diodes (CRDs) are essential components for stabilizing current in electronic circuits, particularly under varying conditions.
- Lateral device structures offer advantages in scalability and integration for advanced semiconductor applications.
Purpose of the Study:
- To propose and experimentally demonstrate a novel AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD).
- To integrate a Schottky barrier diode (SBD) anode with a hybrid trench cathode for enhanced current regulation.
- To evaluate the performance characteristics, including voltage ratings and temperature stability, of the proposed RB-CRD.
Main Methods:
- Fabrication of an AlGaN/GaN lateral RB-CRD on a silicon substrate utilizing trench technology for both anode and cathode.
- Integration of a Schottky barrier diode (SBD) in the anode structure to achieve reverse blocking capability.
- Characterization of the device's electrical performance, including turn-on voltage, reverse breakdown voltage, knee voltage, and forward operating voltage.
- Testing of the RB-CRD's current regulating capability and temperature stability over a wide operational range (25°C to 300°C).
Main Results:
- The integrated SBD anode demonstrated a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V.
- The hybrid trench cathode functioned as a CRD, enabling a knee voltage of 1.3 V and forward operation beyond 200 V.
- The RB-CRD exhibited excellent steady current output across temperatures from 25°C to 300°C.
- The forward regulating current showed small negative temperature coefficients, less than -0.152%/°C.
Conclusions:
- The proposed AlGaN/GaN lateral RB-CRD with trench Schottky anode and hybrid trench cathode is experimentally validated.
- The device offers robust current regulation with high voltage ratings and exceptional stability over an extensive temperature range.
- This novel RB-CRD presents a promising solution for stable current delivery in demanding power electronic applications.
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