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Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate

Zhuo Wang1, Zhangyi'an Yuan1, Xin Zhou2

  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Sichuan, China.

Nanoscale Research Letters
|January 29, 2019
PubMed

Keywords:
Enhanced dual-gateLateral double-diffused metal-oxide-semiconductor transistor (LDMOS)Partial buried layerSpecific on-resistance

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