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Updated: Jan 30, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Heli Seppänen1, Iurii Kim2,3, Jarkko Etula4

  • 1Department of Electronics and Nanoengineering, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, Finland. heli.seppanen@aalto.fi.

Materials (Basel, Switzerland)
|January 31, 2019
PubMed

Keywords:
ALAALDAlNMOCVDbuffer layersregrowthtransition layer

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