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Published on: November 22, 2016
Extraordinary Radiation Hardness of Atomically Thin MoS2
Andrew J Arnold, Tan Shi1, Igor Jovanovic1
1Nuclear Engineering and Radiological Sciences , University of Michigan , Ann Arbor , Michigan 48109 , United States.
Atomically thin two-dimensional (2D) semiconductors exhibit remarkable radiation resilience, making them ideal for space electronics. Ultrathin molybdenum disulfide (MoS2) nanosheets withstand extreme proton and helium irradiation, proving their potential for harsh environments.
Area of Science:
- Materials Science
- Semiconductor Physics
- Space Electronics
Background:
- Space electronics face significant challenges from radiation damage by energetic particles.
- Two-dimensional (2D) semiconductors offer potential advantages due to their unique material properties.
Purpose of the Study:
- To evaluate the radiation resilience of atomically thin 2D semiconductors for space applications.
- To isolate and assess the impact of irradiation on standalone 2D semiconductor layers.
Main Methods:
- Utilized van der Waals epitaxy to study ultrathin molybdenum disulfide (MoS2) nanosheets.
- Exposed MoS2 nanosheets to high fluences of proton and helium irradiation.
- Employed a statistical approach to analyze radiation-induced changes in device parameters.
Main Results:
- Ultrathin MoS2 nanosheets demonstrated extraordinary resilience to proton and helium irradiation up to ~10^16 and ~10^15 ions/cm^2.
- The study successfully differentiated radiation effects on the 2D channel from substrate and interface effects.
- Statistical analysis confirmed the robustness of MoS2 under irradiation.
Conclusions:
- Atomically thin 2D semiconductors, particularly MoS2, are highly promising for space electronics due to their radiation hardness.
- Findings support the use of 2D materials in high-radiation environments beyond space, including aircraft and nuclear reactors.
- Future studies should consider substrate and interface effects in radiation damage assessments of 2D materials.
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